By Vassil Palankovski,Rüdiger Quay
The subject of this monograph is the actual modeling of heterostructure units. a close dialogue of actual versions and parameters for compound semiconductors is gifted together with the proper elements of recent submicron heterostructure units. greater than 25 simulation examples for various forms of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and excessive electron mobility transistors (HEMTs) are given compared to experimental facts from state of the art devices.
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